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1

Photoconductive spectral analysis of InAs quantum dot under normal incidence

S.E. Schacham, G. Bahir, E. Finkman, F.H. Julien, F. Fossard, J. Brault, M. Gendry

Journal:

Infrared Physics & Technology

Year:

2003

Language:

english

File:

PDF, 268 KB

english, 2003

2

Photoconductivity of Ge/Si quantum dot photodetectors

N. Rappaport, E. Finkman, P. Boucaud, S. Sauvage, T. Brunhes, V. Le Thanh, D. Bouchier, S.E. Schacham

Journal:

Infrared Physics & Technology

Year:

2003

Language:

english

File:

PDF, 260 KB

english, 2003

3

Growth of CdTe single crystals

A. Muranevich, M. Roitberg, E. Finkman

Journal:

Journal of Crystal Growth

Year:

1983

Language:

english

File:

PDF, 477 KB

english, 1983

4

The effect of gallium implantation on the optical properties of diamond

Draganski, M.A., Finkman, E., Gibson, B.C., Fairchild, B.A., Ganesan, K., Nabatova-Gabain, N., Tomljenovic-Hanic, S., Greentree, A.D., Prawer, S.

Journal:

Diamond and Related Materials

Year:

2013

Language:

english

File:

PDF, 857 KB

english, 2013

5

Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects

S. E. Schacham, E. Finkman

Year:

1985

Language:

english

File:

PDF, 929 KB

english, 1985

6

Lattice dynamics of tetrahedrally bonded semiconductors containing ordered vacant sites

Finkman, E., Tauc, J., Kershaw, R., Wold, A.

Journal:

Physical Review B

Year:

1975

Language:

english

File:

PDF, 1.11 MB

english, 1975

7

High-order resonant Raman scattering by combinations and overtones of interface phonons in GaAs-AlAs short-period superlattices

Meynadier, M. H., Finkman, E., Sturge, M. D., Worlock, J. M., Tamargo, M. C.

Journal:

Physical Review B

Year:

1987

Language:

english

File:

PDF, 138 KB

english, 1987

8

Electronic Raman Effect and Spectroscopic Studies of NdAl

Finkman, E., Cohen, E., Van Uitert, L. G.

Journal:

Physical Review B

Year:

1973

Language:

english

File:

PDF, 746 KB

english, 1973

9

Midinfrared Photoconductivity in Ge/Si Self-Assembled Quantum Dots

P. Boucaud, T. Brunhes, S. Sauvage, N. Yam, V. Le Thanh, D. Bouchier, N. Rappaport, E. Finkman

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 80 KB

english, 2001

10

Limited potential model for unscreened ionized impurity scattering in multiple quantum-well structures

S. Maimon, G. Bahir, E. Finkman, S.E. Schacham

Journal:

Superlattices and Microstructures

Year:

1998

Language:

english

File:

PDF, 122 KB

english, 1998

11

Optical properties of bulk and multi-quantum well SiGe: C heterostructures

P. Boucaud, C. Guedj, D. Bouchier, F.H. Julien, J.-M. Lourtioz, S. Bodnar, J.L. Regolini, E. Finkman

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 283 KB

english, 1995

12

Realization of Si1−x−yGexCySi heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)

J. Boulmer, P. Boucaud, C. Guedj, D. Débarre, D. Bouchier, E. Finkman, S. Prawer, K. Nugent, A. Desmur-Larré, C. Godet, P. Roca i Cabarrocas

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 400 KB

english, 1995

13

Indirect excitons in short period superlattices

M.D. Sturge, E. Finkman, M.C. Tamargo

Journal:

Journal of Luminescence

Year:

1988

Language:

english

File:

PDF, 687 KB

english, 1988

14

Lattice vibrations and the crystal structure of GaS and GaSe

E. Finkman, A. Rizzo

Journal:

Solid State Communications

Year:

1974

Language:

english

File:

PDF, 363 KB

english, 1974

15

Electrical transport measurements in TiS3

E. Finkman, B. Fisher

Journal:

Solid State Communications

Year:

1984

Language:

english

File:

PDF, 321 KB

english, 1984

16

Growth of Si1 − x − yGexCy multi-quantum wells: structural and optical properties

P. Boucaud, C. Guedj, F.H. Julien, E. Finkman, S. Bodnar, J.L. Regolini

Journal:

Thin Solid Films

Year:

1996

Language:

english

File:

PDF, 506 KB

english, 1996

17

WSi Schottky diodes: effect of sputtering deposition conditions on the barrier height

M. Mamor, E. Dufour-Gergam, L. Finkman, G. Tremblay, F. Meyer, K. Bouziane

Journal:

Applied Surface Science

Year:

1995

Language:

english

File:

PDF, 355 KB

english, 1995

18

Schottky diodes on Si1−x−yGexCy alloys: effect of the C-incorporation

M. Mamor, F. Meyer, D. Bouchier, G. Vialaret, E. Finkman, S. Bodnar, J.L. Regolini

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

19

Optical absorption study of MOCVD grown CdTeZnTe superlattices

Hadas Shtrikman, E. Finkman

Journal:

Superlattices and Microstructures

Year:

1989

Language:

english

File:

PDF, 306 KB

english, 1989

20

Vertical transport, transmission coefficients, and dwell time in asymmetric quantum well structures

A. Fraenkel, E. Finkman, G. Bahir, A. Brandel, G. Livescu, M.T. Asom

Journal:

Superlattices and Microstructures

Year:

1992

Language:

english

File:

PDF, 383 KB

english, 1992

21

Accurate numerical method for calculating spectra in solids—IV. Extension to trigonal crystals

E. Finkman, Z. Kam, E. Cohen, G. Gilat

Journal:

Journal of Physics and Chemistry of Solids

Year:

1971

Language:

english

File:

PDF, 303 KB

english, 1971

22

Local strains in Si1−x−yGexCy alloys as deduced from vibrational frequencies

E. Finkman, H. Rücker, F. Meyer, S.D. Prawer, D. Bouchier, J. Boulmer, S. Bodnar, J.L. Regolini

Journal:

Thin Solid Films

Year:

1997

File:

PDF, 373 KB

1997

23

Carbon dependence of the dielectric response function in epitaxial SiGeC layers grown on Si

J. Bonan, F. Meyer, E. Finkman, P. Warren, P. Boher

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 207 KB

english, 2000

24

Raman spectroscopy of Si1 − x − yGexCy layers obtained by pulsed laser induced epitaxy

E. Finkman, J. Boulmer, P. Boucaud, C. Guedj, D. Bouchier, K. Nugent, S. Prawer

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 524 KB

english, 1996

25

Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(0 0 1)

F. Fossard, A. Helman, F.H. Julien, M. Gendry, J. Brault, E. Péronne, A. Alexandrou, S.E. Schacham, E. Finkman

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 185 KB

english, 2003

26

Temperature dependence of responsivity in quantum dot infrared photodetectors

S.E. Schacham, G. Bahir, E. Finkman, F.H. Julien, J. Brault, M. Gendry

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 67 KB

english, 2003

27

Measurement of electron capture probability in quantum well

S Maimon, E Finkman, S.E Schacham, D Ritter, G Bahir

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

1998

Language:

english

File:

PDF, 101 KB

english, 1998

28

Quantum dot infrared photodetectors in new material systems

E Finkman, S Maimon, V Immer, G Bahir, S.E Schacham, O Gauthier-Lafaye, S Herriot, F.H Julien, M Gendry, J Brault

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2000

Language:

english

File:

PDF, 269 KB

english, 2000

29

The anomalous composition dependence of the bandgap of GaAsN

U. Tisch, E. Finkman, J. Salzman

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 169 KB

english, 2003

30

Effect of doping location on photoconductive spectrum of SiGe quantum dots

S. E. Schacham, A. Vardi, V. Le Thanh, E. Finkman

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 300 KB

english, 2007

31

The atypical temperature evolution of the phonon modes of GaAsN

U. Tisch, E. Finkman, S. Prawer, J. Salzman

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 210 KB

english, 2004

32

Optical properties of thin layer AlAs/GaAs superlattices

M.C. Tamargo, R.E. Nahory, M.-H. Meynadier, E. Finkman, M.D. Sturge, D.M. Hwang, J. Ihm

Journal:

Journal of Crystal Growth

Year:

1987

Language:

english

File:

PDF, 713 KB

english, 1987

33

Optical properties and band structure of short-period GaAs/AlAs superlattices

E. Finkman, M.D. Sturge, M.-H. Meynadier, R.E. Nahory, M.C. Tamargo, D.M. Hwang, C.C. Chang

Journal:

Journal of Luminescence

Year:

1987

Language:

english

File:

PDF, 1.43 MB

english, 1987

34

Growth and properties of Hg1-xCdxTe epitaxial layers

Y. Nemirovsky, S. Margalit, E. Finkman, Y. Shacham-Diamand, I. Kidron

Journal:

Journal of Electronic Materials

Year:

1982

Language:

english

File:

PDF, 1.09 MB

english, 1982

35

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

G. Coudenys, I. Moeeman, G. Vermeire, F. Vermaerke, Y. Zhu, P. Van Daele, P. Demeester, E. Maayan, B. Elsner, J. Salzman, E. Finkman

Journal:

Journal of Electronic Materials

Year:

1994

Language:

english

File:

PDF, 884 KB

english, 1994

36

Measurement of laser annealed SiCGe by nuclear microprobe analysis

M.M. Campbell, N. Mazhoore, K.K. Lee, D.N. Jamieson, E. Finkman

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1998

Language:

english

File:

PDF, 462 KB

english, 1998

37

Carrier recombination processes in GaAsN: from the dilute limit to alloying

Intartaglia, R., Taliercio, T., Lefebvre, P., Valvin, P., Bretagnon, T., Guillet, T., Gil, B., Tisch, U., Finkman, E., Salzman, J., Pinault, M.-A., Tournie, E.

Journal:

IEE Proceedings - Optoelectronics

Year:

2004

Language:

english

File:

PDF, 241 KB

english, 2004

38

Approximations for carrier density in nonparabolic semiconductors

Ariel-Altschul, V., Finkman, E., Bahir, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 538 KB

english, 1992

39

Integrated Intensity of 33-µ Band of Methane

FINKMAN, E., GOLDMAN, A., OPPENHEIM, U. P.

Journal:

Journal of the Optical Society of America

Year:

1967

Language:

english

File:

PDF, 219 KB

english, 1967

40

Spectral Emissivity of the 33-u¸ Band of Methane at Elevated Temperatures

GOLDMAN, A., FINKMAN, E., OPPENHEIM, AND U. P.

Journal:

Journal of the Optical Society of America

Year:

1969

Language:

english

File:

PDF, 741 KB

english, 1969

41

Oscillator strength, lifetime and degeneracy of resonantly excited bound excitons in GaAs

E. Finkman, M.D. Sturge, R. Bhat

Journal:

Journal of Luminescence

Year:

1986

Language:

english

File:

PDF, 343 KB

english, 1986

42

Infrared optical absorption of Hg1âxCdxTe

Finkman, E., Nemirovsky, Y.

Journal:

Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 637 KB

english, 1979

43

Intrinsic carrier concentration of Hg1âxCdxTe

Nemirovsky, Y., Finkman, E.

Journal:

Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 633 KB

english, 1979

44

Dependence of the refractive index of Al[sub x]Ga[sub 1âx]N on temperature and composition at elevated temperatures

Tisch, U., Meyler, B., Katz, O., Finkman, E., Salzman, J.

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 409 KB

english, 2001

45

W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

Mamor, M., Finkman, E., Meyer, F., Bouziane, K.

Journal:

MRS Proceedings

Year:

1994

Language:

english

File:

PDF, 350 KB

english, 1994

46

Current induced intersubband absorption in GaAs/GaAlAs quantum wells

Fenigstein, A., Fraenkel, A., Finkman, E., Bahir, G., Schacham, S. E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 347 KB

english, 1995

47

Spectroscopy of the electronic states in InAs quantum dots grown on

Fossard, F., Helman, A., Fishman, G., Julien, F. H., Brault, J., Gendry, M., Péronne, E., Alexandrou, A., Schacham, S. E., Bahir, G., Finkman, E.

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 312 KB

english, 2004

48

Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

Maimon, S., Finkman, E., Bahir, G., Schacham, S. E., Garcia, J. M., Petroff, P. M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 267 KB

english, 1998

49

The anomalous bandgap bowing in GaAsN

Tisch, U., Finkman, E., Salzman, J.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 282 KB

english, 2002

50

Lifetime and carrier-concentration profile of B+-implanted p-type HgCdTe

A. Fraenkel, S. E. Schacham, G. Bahir, E. Finkman

Journal:

Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 703 KB

english, 1986

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